Chemical Beam Epitaxy & Related Techniques

Die Strahlepitaxie (Chemical Beam Epitaxy) ist eine relativ neue Methode der Herstellung von Halbleiterschichten. Hier erfahren Sie alles Wichtige rund um dieses Verfahren: Ausrüstung, chemische Mechanismen, Eigenschaften verschiedener Halbleitermaterialien. Für Interessenten aus Physik, Elektronik und Elektrotechnik.Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.